首页> 外国专利> Substrate-triggering electrostatic discharge protection circuit for deep- submicron integrated circuits

Substrate-triggering electrostatic discharge protection circuit for deep- submicron integrated circuits

机译:用于深亚微米集成电路的触发衬底的静电放电保护电路

摘要

A substrate-triggering ESD protection circuit is provided for use on a deep-submicron integrated circuit for ESD protection of the integrated circuit. The ESD protection circuit is incorporated between an input end and the internal circuit of the integrated circuit formed on a substrate. The ESD protection circuit utilizes a featured substrate- triggering operation to trigger the ESD-protection transistors formed in N-wells of the substrate into conducting state so as to bypass the ESD current to the ground. The ESD protection circuit allows a simplified semiconductor structure to fabricate, while nonetheless providing an increased level of ESD protection capability for the deep-submicron integrated circuit.
机译:提供了触发衬底的ESD保护电路,以用于深亚微米集成电路上,以对集成电路进行ESD保护。 ESD保护电路被结合在输入端和形成在基板上的集成电路的内部电路之间。 ESD保护电路利用特征性的衬底触发操作来将形成在衬底的N阱中的ESD保护晶体管触发到导通状态,从而将ESD电流旁路到地。 ESD保护电路允许制造简化的半导体结构,同时为深亚微米集成电路提供更高级别的ESD保护能力。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号