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Process for depositing high deposition rate halogen-doped silicon oxide layer
Process for depositing high deposition rate halogen-doped silicon oxide layer
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机译:沉积高沉积速率的掺卤素氧化硅层的工艺
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摘要
A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF. sub.4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N.sub.2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 m/min. The resulting FSG film is stable and has a low dielectric constant.
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