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Method and apparatus for passive characterization of semiconductor substrates subjected to high energy (MEV) ion implementation using high- injection surface photovoltage

机译:使用高注入表面光电压对经受高能(MEV)离子实施的半导体衬底进行无源表征的方法和设备

摘要

Probe structures for testing electrical interconnections to integrated circuit devices and other electronic components; particularly to testing integrated circuits devices with high density area array solder ball interconnections. The probe structure is formed from a substrated have a surface, with at least one electrical contact location having a perimeter which is raised above the surface, and a location within the boundaries of said perimeter which is raised above the surface.
机译:用于测试与集成电路设备和其他电子组件的电气互连的探针结构;特别是用于测试具有高密度面积阵列焊球互连的集成电路器件。探针结构由具有表面的基底形成,该基底具有至少一个电接触位置,该电接触位置具有在表面上方凸起的周边以及在该周边的边界内凸起在表面上方的位置。

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