DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER ELEMENT AND MULTI-WAVELENGTH LASER ARRAY AND THEIR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a distributed-feedback semiconductor laser element that has different oscillation wavelength, and has oscillation structure that can be easily manufactured. ;SOLUTION: In a multi-wavelength laser array 10, ridge-waveguide semiconductor laser elements 13a to 13f are arranged in an array shape, where the ridge-wave semiconductor laser elements have a different oscillation wavelength on a common n-InP substrate 12. On the substrate, each element has the lamination structure of an n-InP buffer layer 14, a non-doped GaInAsP layer 16, a non-doped distortion quantum well active layer 18, a non-doped GaInAsP layer 20 where a diffraction grating is formed, a p-InP cladding layer 22, a p-GaInAsP layer 26, a p-InP cladding layer 28, and a p-GaInAs contact layer 30. The upper part of the lamination structure is formed at the same intervals as stripe-shaped ridges 31a to 31f, channel width is successively set to 2.0 to 3.5 μm in 0.3 μm steps, the equivalent refractive index of the active layer is changed, and the oscillation wavelength of each element is changed.;COPYRIGHT: (C)2001,JPO