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Sputter deposition method, method of manufacturing a sputtering film-forming apparatus and semiconductor device
Sputter deposition method, method of manufacturing a sputtering film-forming apparatus and semiconductor device
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机译:溅射沉积方法,制造溅射成膜装置的方法和半导体器件
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摘要
There is provided an RF sputtering film forming method of forming a compound film having a stable composition by use of stable plasma with a broad process window to thus facilitate composition control of the compound film. In the RF sputtering film forming method, an alternating voltage or alternating current is applied to a part or all of walls positioned on the outside of a space formed between a wafer and a target, or an electron temperature in the plasma is reduced by oscillating the RF power in a pulse fashion, or a sputtering gas is composed of at least one kind of gases of helium, neon, xenon, and krypton, or a minus voltage is applied to a part or all of the walls positioned on the outside of the space formed between the wafer and the target.
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