(57) Abstract Hybrid organicity inorganic semiconductor equipment (i) at least one formation of the conductivity semiconductor like nGaAs or n (Al and Ga) which is doped As; (ii) the semiconductor which is not doped, for example, GaAs or (Al and Ga), at least kind of one which consists of As insulating Characteristic formation; With the polyfunctional organicity sensitive numerator which chemistry is made to adsorb directly with respect to one of that surface (iii), the thin layer of the polyfunctional organicity sensitive numerator which at least possesses one which works at least as one which is joined to the aforementioned surface functional group and a sensor other functional group; And with two conductivity pads with respect to (iv) aforementioned electric conductivity formation and the apex formation which forms the electric contact, the place of the distance which in at those time is limited from the surface of the device two conductivity pads which electric current can flow, it consists of, it is given as the chemical material and the sensor for light. The surface join Characteristic functional group of the polyfunctional organicity sensitive numerator, may be the aliphatic series of one or more or the carboxyl, thiol, sulfide, the hidorokisamu Acid, or the trichlororo silane basis of aromatic. Although it joins and detects the metal ion where the functional group which works as a sensor seems like the radical which was induced from the hidorokisamu Acid, bipyridyl, the imidazole and the hydroxy quinoline, like the Cu2+, the Fe2+, and the Ru2+ and although it is the basis which is suited, or it is the effective optical absorbent at the wavelength which is given, light is detected, the radical which was suited, was induced from the hydroxamate of aliphatic or aromatic, the displacement aromatic basis like the cyano benzoyl and the methoxy benzoyl, bipyridyl and the hydroxy quinoline, it is the basis like the imidazolyl basis which metal porphyrin or the metal phthalocyanine residue is bonded.
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