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The resist evaluation device and use this the resist application device and the resist application manner

机译:抗蚀剂评价装置及使用该抗蚀剂涂敷装置及抗蚀剂涂敷方式的方法

摘要

PURPOSE: To provide a resist coater with an evaluation unit so that defects of an interconnection pattern to be formed on a substrate can be reduced in the process of manufacturing a semiconductor device. ;CONSTITUTION: Before a liquid resist is applied from a resist tank to a rotating wafer 13 such as silicon, that liquid resist is previously applied to a transparent monitor substrate 9. A resist film on this substrate is then exposed to light emitted from a light source 10 such as a laser. The irradiated light is then scattered when passing through the resist film. The amount of dust on the resist film is known by detecting scattered light from the rear surface of the monitor substrate 9 by means of a light receiving unit 11. When the amount is below a standard value, this liquid resist is applied as a non-defective resist onto the wafer 13, so that a resist pattern is formed.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:提供一种具有评估单元的抗蚀剂涂布机,从而可以减少在制造半导体器件的过程中要在基板上形成的互连图案的缺陷。 ;组成:在将抗蚀剂从抗蚀剂罐施加到旋转的晶片13(例如硅)之前,先将该抗蚀剂施加到透明的监视器基板9上。然后,将该基板上的抗蚀剂膜暴露于从光发射的光中光源10,例如激光。然后,当穿过抗蚀剂膜时,被照射的光被散射。通过利用光接收单元11检测来自监测器基板9的后表面的散射光来知道抗蚀剂膜上的灰尘量。当该含量低于标准值时,将该液态抗蚀剂作为非抗蚀剂施加。缺陷的抗蚀剂涂覆到晶片13上,从而形成抗蚀剂图案。;版权所有:(C)1993,日本特许厅&日本

著录项

  • 公开/公告号JP3163147B2

    专利类型

  • 公开/公告日2001-05-08

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP19920046196

  • 发明设计人 浦山 和彦;奥村 勝弥;

    申请日1992-01-31

  • 分类号H01L21/027;G03F7/16;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 01:32:23

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