首页> 外国专利> PHASE SHIFT MASK HAVING THREE DIFFERENT PHASE SHIFT REGION AND METHOD FOR MANUFACTURING THE SAME

PHASE SHIFT MASK HAVING THREE DIFFERENT PHASE SHIFT REGION AND METHOD FOR MANUFACTURING THE SAME

机译:具有三个不同移相区域的移相掩模及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a phase shift mask having three different phase shift regions for eliminating the problem that corners have roundness in unexposed regions by diffraction and scattering of light, i.e., a corner round problem and a method for manufacturing the same.;SOLUTION: The surface of a transparent substrate is provided with opaque mask patterns 415 which cover the first part of the transparent substrate and expose the second part of the transparent substrate. The proximate regions around the corners of the opaque mask patterns are evenly divided to the three different phase shift regions 430, 440 and 450 at a phase shift of 120° from each other. These three phase shift regions are achieved by two times of etching steps for forming the first phase shift 430 and the second phase shift region 440. Namely, the region subjected to both of two times of the etching steps is the third phase shift region 450.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种具有三个不同相移区域的相移掩模,以消除由于光的衍射和散射而在未曝光区域中的角部具有圆度的问题,即角部弯曲问题及其制造方法; SOLUTION:透明基板的表面提供有不透明的掩模图案415,该图案覆盖透明基板的第一部分并暴露透明基板的第二部分。围绕不透明掩模图案的拐角的附近区域以120°的相移均匀地划分为三个不同的相移区域430、440和450。彼此。这三个相移区域是通过两次蚀刻步骤形成的,以形成第一相移430和第二相移区域440。即,经历两次蚀刻步骤的区域均为第三相移区域450。 ;版权:(C)2001,日本特许厅

著录项

  • 公开/公告号JP2001166451A

    专利类型

  • 公开/公告日2001-06-22

    原文格式PDF

  • 申请/专利权人 UNITED MICROELECTRONICS CORP;

    申请/专利号JP19990343129

  • 发明设计人 KO SHUNJIN;CHIN KEIJUN;KO GIYU;

    申请日1999-12-02

  • 分类号G03F1/08;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 01:31:50

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