METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND PRODUCED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To efficiently produce a single crystal while preventing the formation of a twin crystal when a compound semiconductor single crystal is grown by an LEC method. ;SOLUTION: The rotational velocity of a crystal is set to be 10 to 15 rpm. When a shoulder part of the crystal is grown, a crucible is rotated with a rotational velocity of 20 to 35 rpm in the direction reverse to the rotational direction of the crystal, and when a straight body part of the crystal is grown, the crucible is rotated with a rotational velocity of 15 to 25 rpm in the direction reverse to the rotational direction of the crystal so that the relative rotational velocity of the crystal to the crucible at growing of the straight body part is lower than that at growing of the shoulder part of the crystal. The radio (d/D) of the diameter (d) of the straight body part of the grown compound semiconductor crystal to the diameter (D) of the crucible is adjusted to be ≥0.3 and ≤0.8.;COPYRIGHT: (C)2001,JPO