Compound semiconductor polycrystal, method for producing compound semiconductor single crystal, and method for producing compound semiconductor polycrystal

摘要

PROBLEM TO BE SOLVED: To provide an InP polycrystal raw material capable of improving a single crystallization rate to improve the yield of single crystal in the manufacturing of an InP single crystal by a liquid encapsulated Czochralski method (a LEC method), and a method for manufacturing the same.SOLUTION: The InP polycrystal has a grain size of 0.1-1.0 μm and an inclusion density of 1×103 cm-2 or less. A method for manufacturing an InP polycrystal comprises: arranging a solid P101, a vessel 104 for holding metal In103 and a shield body 105 including a structure having a plurality of plates connected by a hollow cylindrical body and having a space of 1-5 mm at a place having the farthest distance between the outer periphery of the surface of the plate and the inner surface of a seal ampule 102, in the seal ampule 102; opening a circulation port having a diameter of 15 mm or less and circulating P steam on the inner side by 5-10 mm than the outer periphery of the surface of the plate; sequentially arranging the plates to be shifted at an angle of 60-120° between adjacent plates; and synthesizing the InP polycrystal in the vessel 104 by a horizontal Bridgeman method.SELECTED DRAWING: Figure 1