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RESIN FOR PHOTORESIST, ITS PRODUCING METHOD AND PHOTORESIST COMPOSITION

机译:光刻胶用树脂,其制备方法和光刻胶组成

摘要

PROBLEM TO BE SOLVED: To produce a resin for photoresist of superior homogeneity and capable of giving a fine pattern with high resolution. ;SOLUTION: The resin for photoresist comprises a copolymer of a monomer A, having a relatively high rate of polymerization and a monomer B having a relatively low rate of polymerization. The resin-producing method comprises a preceding step, in which the monomers A and B are fed into a reaction system in such a way that the abundance ratio k between the monomers A and B in the reaction system (A/B: molar ratio) is made less than the composition ratio α between the monomers A and B in the copolymer (A/B; molar ratio) and the monomers are polymerized, and a subsequent step in which the remaining monomers are fed into the system and polymerized. A vinyl monomer having an alicyclic hydrocarbon skeleton may be used as the monomer B.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:生产具有优异均质性并能够提供高分辨率的精细图案的光致抗蚀剂用树脂。 ;解决方案:用于光致抗蚀剂的树脂包含具有较高聚合速率的单体A和具有较低聚合速率的单体B的共聚物。树脂制造方法包括前一步骤,其中将单体A和B以如下方式进料到反应系统中:反应系统中单体A和B之间的丰度比k(A / B:摩尔比)使其小于组成比α。使共聚物中的单体A和B之间的分子量(A / B;摩尔比)与单体聚合,然后进行后续步骤,其中将剩余的单体加入体系中并进行聚合。具有脂环式烃骨架的乙烯基单体可以用作单体B 。;版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001201856A

    专利类型

  • 公开/公告日2001-07-27

    原文格式PDF

  • 申请/专利权人 DAICEL CHEM IND LTD;

    申请/专利号JP20000012838

  • 发明设计人 TOUBOU KAZUHISA;ARAI TAKASHI;AIDA SUSUMU;

    申请日2000-01-21

  • 分类号G03F7/039;C08F2/00;C08F20/18;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:37

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