METAL ALKOXIDE COMPOUND FOR CHEMICAL VAPOR DEPOSITION AND COMPOUND METAL OXIDE THIN FILM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a metal alkoxide having thermal stability suitable for a MOCVD method, a compound metal oxide thin film comprising oxide of Sr (or Ba), Ta (or Nb) and Bi by a CVD method having a high controllability and capable of stably supplying the raw material, suitable for a solution CVD method stably forming the compound metal oxide thin film comprising Bi, Sr and Ta using the compounds, and a method of manufacturing the same film. ;SOLUTION: This metal alkoxide is represented by general formula (I) or (II). (M1 is Ta or Nb, M2 is Sr or Ba, R1 is a 1-4C alkyl, R2, R3 and R4 are each H or a 1-4C alkyl, R5 and R6 are each a 1-4C alkyl, m1 is an integer of 0-3, n1 is an integer of 1-5, n2 is an integer of 0-4 and n1+n2=5, n3 is integer of 1-6, n4 is an integer of 0-5 and n3+n4=6).;COPYRIGHT: (C)2001,JPO