首页>
外国专利>
FORMATION OF VANADIUM OXIDE THIN FILM AND BOLOMETER TYPE INFRARED SENSOR EMPLOYING VANADIUM OXIDE THIN FILM
FORMATION OF VANADIUM OXIDE THIN FILM AND BOLOMETER TYPE INFRARED SENSOR EMPLOYING VANADIUM OXIDE THIN FILM
展开▼
机译:氧化钒薄膜的形成和采用氧化钒薄膜的Bolometer型红外传感器
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To make uniform the electric characteristics of a vanadium oxide thin film by heat treating a thin film of vanadium oxide having a specified resistivity at a specified temperature under reducing atmosphere. ;SOLUTION: A thin film of vanadium oxide (VOx: 2.25≤x2.5) is formed on a semiconductor substrate having diameter of 2-7 inch and heat treated at 250-350°C under reducing atmosphere. The thin film of vanadium oxide is formed by low pressure sputtering in reaction gas using metal vanadium as a target. The low pressure is set in the range of 1-4 mTorr. The resistivity is 1-10 Ω and standard deviation thereof is 5-30%. Standard deviation of the temperature coefficient of resistance of the thin film is 1-8%.;COPYRIGHT: (C)2000,JPO
展开▼