VANADIUM OXIDE THIN FILM AND BOLOMETER TYPE INFRARED RAY SENSOR USING THIS FILM

摘要

PROBLEM TO BE SOLVED: To provide a vanadium oxide thin film, which has a temperature change factor of resistivity at the same degree with vanadium dioxide (VO₂) in the vanadium oxide and which does not generate the metal - semi-conductor transition with a change of the crystal structure in a temperature from freezing point to 100°C or more, and to provide an infrared ray sensor, which can be used in the high temperature condition at 100°C or more without generating a crack and peeling, by using this thin film as the material for bolometer type infrared ray sensor. ;SOLUTION: In a vanadium oxide thin film obtained by reducing vanadium pentoxide, which is manufactured by spattering or sol-gel method and which is treated by heating in the air, with the argon-hydrogen mixture gas, in the case where vanadium oxide is expressed with VO_x, range of the (x) satisfies 1.875(x)2.0. This thin film does not have metal-semi - conductor transition near 70°C unlike a typical VO₂ thin film. This material is used for the material for bolometer type infrared ray sensor.;COPYRIGHT: (C)1997,JPO