首页> 外国专利> DEFECT INFORMATION OBTAINING METHOD FOR SEMICONDUCTOR MEMORY, RELIEVING AND ANALYZING DEVICE FOR SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR MEMORY

DEFECT INFORMATION OBTAINING METHOD FOR SEMICONDUCTOR MEMORY, RELIEVING AND ANALYZING DEVICE FOR SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR MEMORY

机译:半导体存储器的缺陷信息获取方法,半导体存储器的简化和分析装置以及半导体存储器

摘要

PROBLEM TO BE SOLVED: To provide algorithm compressing and analyzing error information quantity by detecting the defect of a line which must be relieved previously when a relieving-analyzing-test of a semiconductor memory is performed. SOLUTION: In a device 120 performing relieving and analyzing of defect information of a semiconductor memory, the device is provided with an address information obtaining means 150 taking in address information corresponding to defect information on a semiconductor memory being a device 100 to be measured, the address information obtaining means 150 is provided with a line defect information obtaining means 150a discriminating the existence of line defect and performing coding when the line is defective, and a bit defect information obtaining means 150b discriminating existence of bit defect and performing coding of bit defect. And, defect information obtained by the address information obtaining means 150 is stored in a storage device 10 for take-in.
机译:要解决的问题:通过检测在执行半导体存储器的释放分析测试之前必须消除的线路缺陷,提供压缩和分析错误信息量的算法。解决方案:在执行补救和分析半导体存储器缺陷信息的设备120中,该设备配有地址信息获取装置150,该装置接收与要测量的设备100的半导体存储器上的缺陷信息相对应的地址信息。地址信息获取装置150包括:线缺陷信息获取装置150a,该线缺陷信息获取装置150a辨别线缺陷的存在,并且在该线缺陷时进行编码;以及位缺陷信息获取装置150b,其辨别比特缺陷的存在并进行位缺陷的编码。并且,由地址信息获取装置150获取的缺陷信息被存储在用于取入的存储设备10中。

著录项

  • 公开/公告号JP2001052497A

    专利类型

  • 公开/公告日2001-02-23

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP19990222151

  • 发明设计人 NAGASAWA HIDEKAZU;FUNAKURA TERUHIKO;

    申请日1999-08-05

  • 分类号G11C29/00;G01R31/28;G06F11/22;G06F11/34;G06F12/16;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:32

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