The invention provides a method for forming a microelectronic device comprising: forming a first electrode (32); depositing an adhesion layer (40) over the first electrode (32) utilizing high density plasma physical vapor deposition, wherein the adhesion layer (40) comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof; depositing a dielectric layer (36) over the adhesion layer (40); and forming a second electrode (34) over the dielectric layer (36). The invention also provides a microelectronic device comprising: a first electrode (32); a second electrode (34); a dielectric layer (36) disposed between the first and second electrodes (32, 34); and an adhesion layer (40) disposed between the first electrode and the dielectric layer, wherein the adhesion layer (40) comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof.
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