PRECURSOR COMPOUND FOR CHEMICAL VAPOR DEPOSITION OF ALUMINA THIN FILM ON SUBSTRATE AND ITS PRODUCTION

摘要

PURPOSE: A precursor compound for forming an alumina thin film layer on an adhesion film or a diffusion protective film formed on a substrate, process of preparing the same and process for deposition of metal oxide thin films using the same are provided, which can deposit in a wide temperature range and have excellent deposition velocity, dielectric constant, adhesion force and reflectivity of alumina thin films to silicon substrates. CONSTITUTION: An organometallic complex compound of the formula: R'R"R"'Al:Ln capable of depositing high purity alumina thin films on a substrate by chemical vapor deposition methods is prepared by reaction of trialkylaluminium as an organometallic compound with a Lewis base (L) such as hetero cyclic amine at room temperatures without using a solvent. In formula, R'R"R"' are selected from the same or different C1-5 alkyl, perfluoroalkyl or alkoxy or borate (BH4); L is selected from alkylaziridine, alkylazetidine, alkylpyrrolidine, alkylpiperidine, alkylhexamethyleneimine, alkylheptamethyleneimine, alkylmorpoline, 1,4-dialkylpiperazine, thiophene and thiopyran; n is an integer from 1 or 2.