Preparation and Characterization of Thin Films of Alumina by Metalorganic Chemical Vapor Deposition

摘要

A simple novel horizontal reactor was used to prepare 2000 angstrom films of alumina on silicon substrates by the thermal decomposition of aluminum tri isopropoxide at temperatures between 350 and 500 C. The films were annealed in oxygen to test suitability towards shrinkage and were characterized as to porosity, the presence of OH absorption bands in the infrared transmittance spectra and breakdown voltage.