-0.25 METHOD OF PATTERNING SUB-0.25 LINE FEATURES WITH HIGH TRANSMISSION ATTENUATED PHASE SHIFT MASKS

摘要

The present invention relates to a method of making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit onto a semiconductor substrate from the mask using an optical exposure tool. A mask pattern "imaging element (imaging elements)" that exists in the mask manufacturing method of the present invention comprises a step of decomposition of an array of. Are separated by a resolution element-phase shifting and the sub-ratio is referred to: (ASBs anti-scattering bars) the imaging element is π- phase shift anti-scatter bars. ASBs are used to form a halftone imaging the mask pattern by the decomposition of at least the feature width. Consequently, the position and the width of the ASBs is adapted to when none of the π- phase-shifting element is not broken down into individual, combined to form a pattern similar to the intended mask features.