Semiconductor Device with Quantum dot buffer in heterojunction structures

摘要

PURPOSE: A semiconductor device is provided to effectively prevent a lattice mismatch between a substrate and an epitaxial layer by using a quantum dot buffer layer of a heterojunction structure. CONSTITUTION: In the semiconductor device of the heterojunction structure including a substrate and a plurality of epitaxial layers grown on the substrate, a quantum dot buffer layer is formed between the substrate and the epitaxial layers. The quantum dot buffer layer is formed by MBE(molecular beam epitaxy), CVD, VPE(vacuum plasma epitaxy) or LPE method. The substrate is used as a compound semiconductor, such as GaAs, Si, InP, or sapphire.