Semiconductor Device with Quantum dot buffer in heterojunction structures

摘要

A semiconductor device to which a quantum dot buffer layer is applied is disclosed. The semiconductor device has a heterojunction structure including a substrate and a crystal layer grown on the substrate, and has a structure in which a quantum dot buffer layer is interposed between the substrate and the crystal layer. Since the quantum dot buffer layer is interposed between the substrate and the crystal layer, the semiconductor device effectively eliminates lattice mismatch between the substrate and the crystal layer. Therefore, it is possible to obtain a semiconductor device having excellent electro-optical characteristics.