Static random access memory 30, which is resistant to soft errors from alpha particle emissions, has a high density memory cell array 44 coupled to word lines 73 and 74 and bit line pairs 68, and has a low power supply voltage ( About 3.3 volts). The charging circuit 55 boosts the power supply voltage to the memory array above the power supply voltage. The charging circuit 55 includes an oscillator 57, a charge pump 56, and a voltage regulator 58. The boosted supply voltage reduces the effect of alpha particles on the memory array 44 at low power supply voltages. Providing a boosted supply voltage to the memory array 44 increases soft error immunity without the addition of capacitance to each of the memory cells 52 and 54.
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