SEMICONDUCTOR DEVICE INCLUDING RESISTANCE ELEMENT WITH SUPERIOR NOISE IMMUNITY

摘要

A semiconductor device excellent in noise immunity including a resistance element is provided.;The well region NWr is provided to face the resistive elements R0 (Ra, Rb) formed on the surface of the semiconductor layer P-SUB, and the well region is fixed at a specific voltage level. A parasitic capacitance is formed between the well region NWr and the resistance element R0, and the noise generated at one end of the resistance element is compensated for by the parasitic capacitance.