Apparatus for fabricating semiconductor devices used by multiple electrode

摘要

The present invention, as in a plasma uniformity control condition according to the semiconductor device manufacturing facility using a multi-electrode such that the semiconductor device manufacturing process consists, in a process chamber in which a predetermined process for producing a semiconductor device is performed, the process chamber are installed such that the wafer is placed inside the lower side, being respectively connected to the plurality of first attenuator supplied with a single first power supply impedance matched power is being supplied, and a lower electrode formed of a plurality of electrodes installed, the interior of the process chamber It is provided on the upper side, being each connected to a plurality of the second attenuator being supplied with a single second power supply impedance is matched power is made is provided with a top electrode composed of a plurality of electrodes.