MICROSTRUCTURE PRODUCING METHOD CAPABLE OF CONTROLLING GROWTH POSITION OF MINUTE PARTICLE OR THIN LINE AND SEMICONDUCTOR DEVICE EMPLOYING THE MICROSTRUCTURE

摘要

Fine particles or growth location of the wire, it is possible to achieve good uniformity and reproducibility of the size and density, by a simple process without the use of special fine processing technology, it is possible to reduce the manufacturing cost, yield, and highly productive production gender as the manufacturing method of a fine structure that can realize a semiconductor device having excellent properties suitable as well, there is provided a semiconductor device using the microstructure. To form an oxide film 12 having a semiconductor substrate 11, the film thickness on the surface of the thick region (12a) and a thin film region (12b). Only on the surface of the next, the oxide film 12, the thin film region (12b) of the thickness, are selectively formed in the microstructure of thin wires (15) composed of silicon Si.