Effects of growth technique on the microstructure of CuInSe2 ternary semiconductor compound

摘要

X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate the lattice parameters, grain sizes, and microstrains of the two grown samples. For a crystal grown by the vertical Bridgeman method, the vacancy serves as an acceptor, resulting in p-type conduction, whereas the vacancy expected to serve as a donor, occurring in n-type conduction for the crystal grown via the traveling heater technique. The concentration of crystal grown via the VBM is determined to be p-type, whereas the concentration of that grown via the THM is n-type. Concerning crystal, the determined crystallite sizes obtained to be 165 and 182 nm for the VBM and THM, respectively.