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TECHNIQUE FOR THE GROWTH OF EPITAXIAL COMPOUND SEMICONDUCTOR FILMS.
TECHNIQUE FOR THE GROWTH OF EPITAXIAL COMPOUND SEMICONDUCTOR FILMS.
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机译:环氧复合半导体薄膜的生长技术。
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摘要
A technique for the deposition of group III-V compound semiconductor films in epitaxial form wherein the group V source material employed is in solid elemental or compound form. The prime advantage of such technique resides in the elimination of the need for the highly toxic arsine gas for this purpose while permitting the preparation of a product essentially free of contamination.
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