Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure

摘要

There is provided a microstructure producing method capable of achieving satisfactory uniformity and reproducibility of the growth position, size and density of a minute particle or thin line and materializing a semiconductor device which can reduce the cost through simple processes without using any special microfabrication technique and has superior characteristics appropriate for mass-production with high yield and high productivity as well as a semiconductor device employing the microstructure. An oxide film 12 having a region 12a of a great film thickness and a region 12b of a small film thickness are formed on the surface of a semiconductor substrate 11. Next, a microstructure that is a thin line 15 made of silicon Si is selectively formed only on the surface of the small-film-thickness region 12b of the oxide film 12.