METHOD FOR MODELING PULSATING IONIZING RADIATION UPON INTEGRAL MICROCIRCUIT ON COMPLEMENTARY METAL- OXIDE-SEMICONDUCTOR STRUCTURES

摘要

FIELD: electronic engineering. SUBSTANCE: method involves applying modeling pulsating ionizing radiation only to test sample of integral microcircuit on complementary metal-oxide-semiconductor structures randomly selected from a lot of integral microcircuits under test. Amplitude and time parameters of pulsating electric current in sample power supply circuit. Pulsating voltage is supplied to sublayer of every complementary metal-oxide- semiconductor integral microcircuit under test. Voltage amplitude, shape and duration are selected so that electric current in feeding circuit of complementary metal-oxide-semiconductor integral microcircuit coincide with amplitude and time parameters of electric current in test sample power supply circuit, recorded in irradiating it with pulsating ionizing radiation of modeling device. EFFECT: enhanced effectiveness and low cost of modeling. 4 dwg