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COMPLEMENTARY METAL- OXIDE-SEMICONDUCTOR CIRCUIT

机译:互补金属氧化物半导体激光器电路

摘要

PURPOSE: To enable an output to drive another gate without any intermediate buffer by pulling up the input terminal of an inverter and making no DC current flow to the inverter when both input signals are high. CONSTITUTION: When the inputs A and B are both low, neither of transistors(TR) 30 and 31 conducts, TRs 34 and 35 turn on to raise the voltage at a node 41 up to Vc C, and a TR 37 turns on to hold a line 39 almost at the earth voltage. When one of them is high, one of the TRs 30 and 31 turns on to send a zero voltage to the node 41 and a TR 38 turns on to develop the voltage Vc C at an output node 39. When both the inputs are high, both the TRs 30 and 31 turn on to supply an input signal which has dropped by a threshold voltage to the node 41. The TR 38 is cut off by feedback through a TR 40 and the DC circuit of the inverter 36 can be eliminated.
机译:目的:通过上拉逆变器的输入端子并在两个输入信号都为高电平时不使直流电流流向逆变器,从而使输出能够在没有任何中间缓冲器的情况下驱动另一个门。组成:当输入A和B均为低电平时,晶体管(TR)30和31均不导通,TR 34和35导通以将节点41的电压升高至Vc C,TR 37导通以保持线39几乎处于接地电压。当其中之一为高电平时,TR 30和31中的一个导通以向节点41发送零电压,而TR 38导通以在输出节点39处产生电压Vcc。当两个输入均为高电平时, TR 30和31两者都导通,以将已经下降了阈值电压的输入信号提供给节点41。TR38通过TR 40的反馈而截止,并且可以消除逆变器36的DC电路。

著录项

  • 公开/公告号JPS6449423A

    专利类型

  • 公开/公告日1989-02-23

    原文格式PDF

  • 申请/专利权人 INTEL CORP;

    申请/专利号JP19880180154

  • 发明设计人 BUIREMU YOTSUTO DERANGE;

    申请日1988-07-19

  • 分类号H03K19/21;

  • 国家 JP

  • 入库时间 2022-08-22 06:43:21

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