A process for the preparation of a storage electrode for a storage capacitor for use in a semiconductor memory device -

摘要

The manufacture of the semiconductor memory device involves forming a first insulator on the substrate overlaying the transfer transistor. A first conductive layer is formed, passing through at least the first insulator, and electrically coupled with one of the drain and source region of transfer transistor. A second insulator is formed. A stack layer is formed on the second insulator. A third insulator is formed on the stack layer sidewall. A fourth insulator is formed on the second and third insulator surface. The third insulator and partial second insulator located under the third insulator is removed. The fourth insulator is removed to form one first opening. A second conductive layer is formed on the stack layer and second insulator surface to fill the first opening. The second conductive layer located above the stack layer is removed. The stack layer is removed. A fifth insulator is formed. The first and second conductive layers are patterned to form a second opening. A third conductive layer is formed on the second opening sidewall. The third conductive layer is connected to the first conductive layer periphery. One end of the second conductive layer is connected to an internal surface of the third conductive layer. The first and third conductive layers constitute one trunk-type like conductive layer. The second conductive layer constitutes one branch-type like conductive layer. The first, second and third conductive layer constitute one storage electrode of the capacitor. The second and fifth insulator are removed. A dielectric is formed on the first, second and third conductive layer exposed surfaces. A fourth conductive layer is formed on the dielectric layer to constitute one opposed electrode of the storage capacitor.