Method and device for depositing layers on rotating substrates in a flow channel heated on all sides

摘要

A device and a method are described for the production of SiC semiconductor layers and related materials with a large electronic band gap and high binding energy (such as, for example, SiC¶x¶Ge¶1-x¶ (x = 0-1), AIN, GaN ). DOLLAR A The invention is characterized by the use of a rotating substrate in a flow channel heated on all sides and an actively cooled gas inlet.