INVESTIGATION ON LAYER PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON DEPOSITED WITH MOVING SUBSTRATES IN COMBINATION WITH A VHF LINEAR PLASMA SOURCE DESIGNED FOR THE FABRICATION OF LARGE AREA DEVICES

摘要

Amorphous and microcrystalline silicon single layers and pin- solar cells were deposited with a VHFPECVDin-line deposition system at 81.36 MHz excitation frequency of the linear plasma source. The focus of theinvestigations was on the TCO/p-contact in case of a-Si:H single junction solar cells (dynamic deposition) and on thedependence of layer properties on the position under the linear plasma source (static deposition) in case ofmicrocrystalline silicon. A-Si:H solar cells could be fabricated with initial efficiencies up to 8.7% by adjusting the playersof the cells. The optimized cells were then deposited on flexible polymer substrates. First results showed initialefficiencies of 4.11% on Polyethylene Terephthalate (PET). The microcrystalline silicon layer properties were foundto depend on the position relative to the linear plasma source. For example, the crystalline volume fraction measuredby Raman varied strongly with the position and, in conclusion, layers prepared by dynamic deposition must beregarded as multilayers consisting of individual layers with different optoelectronic properties.