Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber with substrate holders arranged in a circular manner on a support, heated sources, and a hydride feed line

摘要

Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber (1) with substrate holders (2) arranged in a circular manner on a support (7); heated sources (4); and a hydride feed line (6) for introducing a hydride, especially NH3, AsH3 or PH3, into the reaction chamber. An Independent claim is also included for a process for depositing crystalline layers on crystalline substrates in the gas phase. Preferred Features: The support can be rotated. The heated sources are heated by light or a high frequency. The substrates are made from silicon or aluminum oxide. The deposited layers are made from GaN or AlGaInN.