Device useful for depositing layer on substrate comprises processing chamber having susceptor heated by heating device for receiving substrate, gas inlet element, gas outlet element and gas-tight reactor housing which is outwardly arranged

摘要

Device comprises: a processing chamber (16) having a susceptor (8) heated by a heating device for receiving at least a substrate (9); a gas inlet element for introducing at least one process gas into the processing chamber; and a gas outlet element for passing out gas from the processing chamber, and a gas-tight reactor housing (1) which is outwardly arranged, and surrounds the processing chamber with an outer peripheral wall. The reactor housing has an inner peripheral wall (3) which is surrounded by the circular processing chamber. An independent claim is also included for operating a device, comprisingintroducing the substrates into the processing chamber through a loading and unloading opening in step wise manner, where the susceptor support of all circumferential positions, at which susceptors or substrates are located, is further rotated stepwise, introducing process gases and heating the processing chamber to a process temperature, where layers preferably semiconductor layers are deposited on the substrates and the coated substrates are removed through the loading or unloading opening from the processing chamber in a gradual unloading step, and rotating the susceptor support in step wise manner through all circumferential positions, where susceptors or substrates are located on susceptor support.