The present invention relates to multilevel integrated circuit interconnection techniques. An integrated circuit having a number of electronic components along a semiconductor substrate and a first connection layer having a first number of conductors in selective electrical contact with the components is provided. A first insulative layer is formed on the first connection layer with a first pattern of openings therethrough. A second connection layer is established that has a second number of conductors selectively interconnected to the first conductors through the first pattern of openings. A second insulative layer is formed on the first connection layer with a second pattern of openings therethrough. A third connection layer is formed on the second insulative layer having a third dielectric and a third number of conductors selectively interconnecting the second conductors. The first and second insulative layers are preferably etch selective to a dielectric included in the first, second, and third connection layers; and crossover, crossunder, or local interconnects are formed in a different connection layer than routing interconnects to facilitate higher interconnection density.
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