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Low defect density gallium nitride epilayer and method of preparing the same
Low defect density gallium nitride epilayer and method of preparing the same
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机译:低缺陷密度氮化镓外延层及其制备方法
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摘要
A GaN epilayaer grown on a lattice mismatched saphire substrate is subjected to rapid thermal processing in order the reduce the defect density especially in the proximate the top (device) surface of the GaN epilayer.
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