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Photoreflectance spectral analysis of semiconductor laser structures
Photoreflectance spectral analysis of semiconductor laser structures
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机译:半导体激光器结构的光反射光谱分析
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摘要
A micro-photoreflectance technique has been developed for performing non-destructive analysis of III-V optoelectronic devices. By using a significantly reduced spot size (for example, 10 micrometers), various compositional features of the device may be analyzed and the Franz-Keldysh oscillations appearing in the micro-photoreflectance wavelength spectra (such as those beyond the barrier/SCL wavelength in an EML structure) may be analyzed to provide information regarding the physical characteristics of the device, such as the electric field and p-i junction placement within an exemplary EML device structure.
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