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QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, SPECTRAL MEASURING INSTRUMENT AND METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE

机译:量子阱结构,半导体激光,光谱测量仪器及制造量子阱结构的方法

摘要

PROBLEM TO BE SOLVED: To provide a quantum well structure, semiconductor laser, spectral measuring instrument and method of manufacturing the quantum well structure in which performance of characteristics can be improved by accomplishing the quantum well structure in which a large crystal of In composition thicker than the prior art is made into quantum well layer.;SOLUTION: In a quantum well structure 12 with a quantum well layer 10 formed on an InP substrate, the quantum well layer 10 is crystal-grown at a temperature of ≥440°C and ≤510°C and the quantum well layer 10 has compression distortion of ≥2% and 10%.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种量子阱结构,半导体激光器,光谱测量仪器以及制造量子阱结构的方法,其中通过完成其中In组成比Cd大的大晶体厚的量子阱结构,可以改善特性的性能。解决方案:在具有在InP衬底上形成的量子阱层10的量子阱结构12中,量子阱层10在约440℃的温度下晶体生长。 ≥510℃,并且量子阱层10的压缩变形为≥2%且≤10%。;版权:(C)2008,JPO&INPIT

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