Spectral speckle analysis: A novel technique to determinethe spectrally resolved homogeneous line width insemiconductor nanostructures

摘要

A novel technique to investigate the properties of secondary emission ofrninhomogeneously broadened optical resonances in semiconductor materials is presented. Anrnexperimental method to acquire spectrally and directionally resolved secondary emission ofrnoptical solid state resonances is demonstrated. The spectral coherence degree of the secondaryrnemission of GaAs single quantum wells is extracted by means of a statistical analysis ofrnthe intensity fluctuations (speckles) over the emission directions. The spectrally resolvedrndephasing rate within the inhomogeneously broadened ensemble is evaluated using the spectralrnintensity correlation of the speckles and the temperature dependence of the coherence degreernand the spectrally averaged homogeneous line width is determined.