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Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devices
Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devices
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机译:铁电增强型五氧化二钽,用于CMOS器件中的介电材料
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摘要
In insulated-gate, field effect transistor (IGFET) devices fabricated in integrated circuits, the scaling down of the dimensions of the devices has resulted in structures with dimensions are so small that reproducibility of parameters can become problematic. Specifically, the gate dielectric, typically silicon nitride, silicon oxide or silicon nitride, of a gate structure is nearing the point where the required thickness of the gate dielectric to provide the selected electric field in the channel region is implemented with a few to several atomic layers. In order to improve parameter reproducibility, a dielectric material, such TaO5 or a ferroelectric material, is used as a gate dielectric. TaO5 and the ferroelectric materials have a dielectric constant an order of magnitude higher than the material typically used in the past. Using these materials, the gate dielectric can be proportionately thicker, thereby improving the parameter reproducibility.
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机译:在集成电路中制造的绝缘栅场效应晶体管(IGFET)器件中,器件尺寸的按比例缩小导致结构的尺寸过小,以至于参数的可重复性会成为问题。具体地,栅极结构的栅极电介质,通常是氮化硅,氧化硅或氮化硅,接近于以几原子到几原子实现在沟道区域中提供选定电场所需的栅极电介质厚度的点。层。为了提高参数的可重复性,将诸如TaO 5 Sub>的电介质材料或铁电材料用作栅极电介质。 TaO 5 Sub>和铁电材料的介电常数比过去通常使用的材料高一个数量级。使用这些材料,栅极电介质可以成比例地变厚,从而提高参数的可重复性。
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