Process and device for making a tantalum pentoxide layer on a carrier material particularly titanium nitride and integreted circuit incorporating a tantalum pentoxide layer

摘要

Coating a substrate with tantalum pentoxide comprises heating the substrate to 200-400degreesC and contacting it with an oxidizing gas containing t-butylimino tris(diethylamino) tantalum at a partial pressure of at least 25 mtorr. Coating a substrate with tantalum pentoxide (Ta2O5) comprises heating the substrate to 200-400degreesC and contacting it with an oxidizing gas containing t-butylimino tris(diethylamino) tantalum (t-BuN=Ta(NEt2)3) at a partial pressure of at least 25 mtorr. Independent claims are also included for the following: (1) an apparatus for carrying out the above process, comprising means for heating the substrate and circulating the gas; and (2) an integrated circuit comprising at least one capacitor comprising tantalum pentoxide deposited between two electrodes as above.