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Apparatus and method for improving target erosion in hollow cathode magnetron sputter source

机译:改善空心阴极磁控溅射源中靶腐蚀的装置和方法

摘要

Magnetic field lines within a hollow cathode magnetron sputtering device are modified by various means to improve the full-face erosion profile of the hollow cathode target. These means include, varying the magnetic field of the main magnetic source, extending the magnetic field beyond the opening in the hollow cathode and adding a stationary or mobile magnetic field source adjacent to the closed end surface of the hollow cathode target. The present invention employs various embodiments which when implemented individually or in combination improve the full face erosion of a target cathode in a hollow cathode magnetron sputtering source.
机译:空心阴极磁控溅射装置内的磁力线通过各种手段来改进,以改善空心阴极靶的全表面腐蚀轮廓。这些手段包括,改变主磁场的磁场,将磁场扩展到空心阴极的开口之外,并在空心阴极靶的封闭端面附近增加一个固定的或移动的磁场源。本发明采用了各种实施例,这些实施例在单独实施或组合实施时可改善空心阴极磁控管溅射源中靶阴极的全面腐蚀。

著录项

  • 公开/公告号US6217716B1

    专利类型

  • 公开/公告日2001-04-17

    原文格式PDF

  • 申请/专利权人 NOVELLUS SYSTEMS INC.;

    申请/专利号US19980073358

  • 发明设计人 KWOK FAI LAI;

    申请日1998-05-06

  • 分类号C23C143/40;

  • 国家 US

  • 入库时间 2022-08-22 01:04:34

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