Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions

摘要

Process for the manufacturing of a DMOS-technology transistor, providing for forming, over a semiconductor material layer of a first conductivity type, an insulated gate electrode, introducing in said semiconductor material layer a first dopant of a second conductivity type for forming at least one body region of a second conductivity type extending under the insulated gate electrode, and introducing in said at least one body region a second dopant of the first conductivity type for forming, inside said body region, at least one source region of the first conductivity type, said body region and said source region defining, under the insulated gate electrode, a channel region for the DMOS transistor, wherein said first dopant is aluminum. After the introduction of said first dopant and said second dopant, a single thermal diffusion process for simultaneously diffusing the first dopant and the second dopant is provided.