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Controlling improvement of critical dimension of dual damasceue process using spin-on-glass process
Controlling improvement of critical dimension of dual damasceue process using spin-on-glass process
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机译:使用旋涂玻璃工艺控制双镶嵌工艺关键尺寸的改进
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摘要
The present invention provides a method for controlling the critical dimension of a mask in dual damascene process. The method comprises providing a semiconductor structure which has a contact pattern thereon. A dielectric layer, such as a spin-on glass layer, is formed on the semiconductor structure and the contact pattern. Then a photoresist layer is formed on the dielectric layer. Next, the photoresist layer and the dielectric layer are etched to expose partial the semiconductor structure. Then the exposed semiconductor structure is removed followed by removing the total photoresist layer and the total dielectric layer.
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