A method of fabricating an integrated circuit with ultra-shallow source/drain junctions utilizes a dual-amorphization technique. The technique creates a shallow amorphous region and a deep amorphous region 300 nm thick. The shallow amorphous region is between 10-15 nm below the top surface of the substrate, and the deep amorphous region is between 60-120 nm below the top surface of the substrate. The shallow amorphous region helps to reduce ion-implantation channeling effects, and the deep amorphous region helps to getter point defects generated during dopant implantation. The process can be utilized for P-channel or N-channel metal field effects semiconductor transistors (MOSFETS) and has a very low thermal budget.
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