Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts

摘要

The present invention Is a fabrication method for a short-channel Schottky-barrier field-effect transistor device. The method of the present invention includes introducing channel dopants into a semiconductor substrate such that the dopant concentration varies in the vertical direction and is generally constant in the lateral direction. A gate electrode is formed on the semiconductor substrate, and source and drain electrodes are formed on the substrate to form a Schottky or Schottky-like contact to the substrate.