Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts

摘要

Schottky-barrier source/drain (SB-S/D) is a promising solution for low-resistive contact formation in fully depleted SOI ultra-thin body (UTB) FETs, or FinFETs. In this study the low-frequency noise of FinFETs and UTB-FETs, with platinum-silicide based source/drain contacts with low barrier height was characterized. The barrier height was tuned by means of segregation of implanted As or B. In the linear region of operation the noise power spectral density of devices with different barrier heights was not significantly affected for a given drain current. This suggests that channel noise dominates the behavior and that the low effective Schottky barrier height in dopant segregated devices does not introduce additional noise.