GALLIUM-ARSENIC SINGLE CRYSTAL AND GaAs WAFER AND PRODUCTION METHOD FOR GaAs SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide gallium-arsenic single crystals which have small dislocation density, a gallium-arsenic wafer, and a method for producing the gallium-arsenic single crystals.;SOLUTION: Nitrogen as an element having an action of hardening impurities and a dopant other than nitrogen are jointly doped, so that the GaAs single crystals having small dislocation density can be obtained.;COPYRIGHT: (C)2002,JPO