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Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings

机译:外延高饱和磁化强度FEN Fe(001)播种GaAs(001)单晶晶片使用面向目标溅射

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It was demonstrated that Fe-N martensite (a') films were grown epitaxially on Fe(001) seeded GaAs(OOl) single crystal wafer by using a facing target sputtering method. X-ray diffraction pattern implies an increasing c lattice constant as the N concentration increases in the films. Partially ordered Fe_(16)N_2 films were synthesized after in situ post-annealing the as-sputtered samples with pure Fe_8N phase. Multiple characterization techniques including XRD, XRR, TEM, and AES were used to determine the sample structure. The saturation magnetization of films with pure Fe_8N phase measured by VSM was evaluated in the range of 2.0-2.2 T. The post annealed films show systematic and dramatic increase on the saturation magnetization, which possess an average value of 2.6 T. These observations support the existence of giant saturation magnetization in α"-Fe_(16)N_2 phase that is consistent with a recent proposed cluster-atom model and the first principles calculation [N. Ji, X. Q. Liu, and J. P. Wang, New J. Phys. 12 063032 (2010)].
机译:结果证明,通过使用面对目标溅射方法,在Fe(001)播种的GaAs(OOL)单晶晶片上外延生长Fe-N马氏体(A')膜。随着薄膜的N浓度增加,X射线衍射图案意味着C晶格常数增加。在原位后,将部分有序的Fe_(16)N_2薄膜在原位退火后用纯FE_8N相的溅射的样品合成。使用包括XRD,XRR,TEM和AES的多种表征技术来确定样品结构。通过VSM测量的纯FE_8N相的膜的饱和磁化在2.0-2.2T的范围内。后退火薄膜显示饱和磁化强度的系统和显着的增加,其平均值为2.6吨。这些观察结果支持α“-fe_(16)n_2相位的巨大饱和磁化强度存在于近期提出的簇 - 原子模型和第一个原理计算[N.JI,XQ Liu和JP Wang,New J. phys。12 063032 (2010)]。

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